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| Bulletin I0132J 05/99 IR180DG..HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Wafer Size: VRRM Class: Passivation Process: Square 180 mils 4" 600 and 1200 V Glassivated MESA Reference IR Packaged Part: 26MB Series Major Ratings and Characteristics Parameters VFM VRRM Maximum Forward Voltage Reverse Breakdown Voltage Range Units 1030 mV 600 and 1200 V Test Conditions T J = 25C IF = 25A T J = 25C IR = 100A (1) (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 180 x 180 mils (see drawing) 100 mm, with std. < 110 > flat 300 m 130 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination 1 IR180DG..HCB Series Bulletin I0132J 05/99 Ordering Information Table Device Code IR 1 1 2 3 4 5 6 7 International Rectifier Device Chip Dimension in Mils 180 2 D 3 G 4 12 5 H 6 CB 7 Type of Device: D = Standard Recovery Diode Passivation Process: G = Glassivated MESA Voltage code: Code x 100 = VRRM Metallization: H = Silver (Anode) - Silver (Cathode) Probed Uncut Die Available Class 06 = 600V 12 = 1200V Outline Table All dimensions are in millimeters 2 IR180DG..HCB Series Bulletin I0132J 05/99 Wafer Layout TOP VIEW N 293 Basic Cells All dimensions are in millimeters 3 |
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